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1. general description the mmic is a one-stage amplifier, offe red in a low-cost leadless surface-mount package. at 3.6 v it delivers 29.5 dbm ou tput power at 3 db gain compression with efficiency higher than 55 %. its power saving f eatures include simple quiescent current adjustment, which allows class-ab operation and logic-level shutdown control to reduce the supply current to 4 ? a. 2. features and benefits ? 400 mhz to 2700 mhz frequency operating range ? integrated active biasing ? external matching allows broad application optimization of the el ectrical performance ? efficiencies higher than 55 % ? 3.6 v single supply operation ? power-down ? excellent robustness: ? all pins esd protected (hbm 6 kv; cdm 2 kv) ? withstands mismatch of vswr 50 : 1 through all phases ? withstands electrical over-stress peaks of 4.5 v on the supply voltage 3. applications in this data sheet two industrial, scientific and medical (ism) applications are described, namely ism at 434 mhz and ism at 915 mhz. the BGA6130 is also suited for a range of other applications: ? broadband cpe / moca ? wlan / ism / rfid ? wireless sensor network (wsn) ? industrial applications ? satellite master antenna tv (smatv) BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier rev. 2 ? 12 february 2014 product data sheet + 9 6 2 1
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 2 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 4. quick reference data [1] supply voltage on pins rf_out and v cc . [2] current through pins rf_out and v cc . [3] t case is the temperature at the sol dering point of the exposed die pad. 5. design support [1] see http://www.nxp.com/models.html . table 1. quick reference data 3.3 v ? v sup ? 3.9 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 3900 ? (tolerance 10 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit v sup supply voltage [1] 3.3 3.6 3.9 v i cc(tot) total supply current [2] 50 70 90 ma 1k ? ? r3 ? 5k ? [2] 30 - 250 ma 1k ? ? r3 ? 5k ? ; pin enable = low [2] -46 ? a t case case temperature [3] ? 40 +25 +85 ?c f frequency 400 - 2700 mhz measured at ism-434 mhz (see section 14 ) f frequency 433 434 435 mhz g p power gain 433 mhz ? f ? 435 mhz 14 17 20 db p l(1db) output power at 1 db gain compression 433 mhz ? f ? 435 mhz 25 28 - dbm p l(3db) output power at 3 db gain compression 433 mhz ? f ? 435 mhz - 29.5 - dbm ? efficiency 433 mhz ? f ? 435 mhz; at p l(3db) -56- % measured at ism-915 mhz (see section 14 ) f frequency 902 915 928 mhz g p power gain 902 mhz ? f ? 928 mhz 11 14 17 db p l(1db) output power at 1 db gain compression 902 mhz ? f ? 928 mhz 26 29 - dbm p l(3db) output power at 3 db gain compression 902 mhz ? f ? 928 mhz - 30 - dbm ? efficiency 902 mhz ? f ? 928 mhz; at p l(3db) -60- % table 2. available design support download from the BGA6130 product page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads planned [1] based on mextram device model. device models for awr microwave office no [1] based on mextram device model. device models for ansys ansoft designer no [1] based on mextram device model. spice model planned [1] based on gummel-poon device model. s-parameters yes noise parameters yes customer evaluation kit yes see section 6 and section 14 . gerber files yes gerber files of boards pr ovided with the customer evaluation kit. solder pattern yes
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 3 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 6. ordering information [1] the customer evaluation ki t contains the following: a) fully populated and matched rf evaluation board for ism 434 b) fully populated and matched rf evaluation board for ism 915 c) unpopulated printed-circuit board (pcb) d) two sma connectors for fitting unpopulated printed-circuit board (pcb) e) BGA6130 samples 7. functional diagram table 3. ordering information type number package name description version BGA6130 hvson8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 ? 3 ? 0.85 mm sot908-3 om7828/BGA6130/kit - customer evaluation kit for BGA6130 [1] - fig 1. functional diagram %$1'*$3 9, &219(57(5 5)b287 ,13870$7&+ 2873870$7&+ 9 && ,&4b$'- (1$%/( 9 683 5 *1' / ddd 5)b,1
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 4 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 8. pinning information 8.1 pinning 8.2 pin description [1] this pin can be connected to ground. [2] this pin requires an external dc-blocking capacitor. [3] rf decoupled. [4] the exposed die pad of the sot908-3 also fu nctions as heatsink for the power amplifier. 9. functional description 9.1 supply current adjustment the supply current can be adjusted by changing the value of biasing resistor r3 which connects pin icq_adj (pin 8) to ground (see figure 1 ). fig 2. pin configuration (1$%/( 5)b287 5)b287 5)b,1 qf 7udqvsduhqwwrsylhz ,&4b$'- whuplqdo lqgh[duhd %*$ qf ddd 9 && table 4. pin description symbol pin description n.c. 1, 4 not connected [1] rf_out 2, 3 rf output and supply to the amplifier [2] v cc 5 bias supply voltage [3] enable 6 enable rf_in 7 rf input [2] icq_adj 8 quiescent collector current adjustment by an external resistor gnd exposed die pad ground [4]
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 5 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 9.2 enable control the BGA6130 can be powered down using enable pin 6 (enable). in case this control function is not needed the enable pin can be connected to the bias supply voltage pin 5 (v cc ). the current through the enable pin 6 should never exceed 20 ma as this might damage the esd protection circuitr y. this can be avoided either by preventing the voltage on this pin to exceed the supply voltage (v sup ) or by adding a series resistor. v sup = 3.6 v; t amb = 25 ? c. fig 3. supply current i cc(tot) as function of biasing r esistor r3; typical values ddd 5 , &&wrw &&wrw , &&wrw p$ p$ p$ table 5. enable truth table see table 8 . logic level on pin enable (pin 6) status BGA6130 low powered down high powered on
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 6 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 10. limiting values [1] absolute maximum dc voltage on pins rf_out, icq_adj and v cc . [2] absolute maximum dc voltage on pin enable. [3] absolute maximum dc current through pin enable. [4] if v i(dig) exceeds v sup the internal esd protection circuit can be damaged (see figure 5 ). the pin enable can be connected to v cc in case the enable control function is not used (see section 9.2 ). v sup = 3.6 v; t amb = 25 ? c. fig 4. total supply current as function of voltage on pin e nable; typical values ddd 9 ,glj 9 , &&wrw &&wrw , &&wrw p$ p$ p$ table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v sup supply voltage [1] ? 0.2 +4.5 v v i(dig) digital input voltage [2] [4] 0v sup + 0.3 v i i(dig) digital input current [3] [4] ? 20 +20 ma i cc(tot) total supply current - 350 ma p i(rf) rf input power f = 434 mhz; switched - 15 dbm f = 915 mhz; switched - 15 dbm t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c v esd electrostatic discharge voltage human body model (hbm); according jedec standard 22-a114e -6 kv charged device model (cdm); according jedec standard 22-c101b -2 kv
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 7 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 11. thermal characteristics 12. static characteristics v sup = 3.6 v. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 5. current through pin enable as a function of voltage on pin enable at a supply voltage v sup of 3.6 v; typical values ddd 9 ,glj 9 , ,glj ,glj , ,glj $ $ $ table 7. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case <85 ? c6k/w table 8. static characteristics 3.3 v ? v sup ? 3.9 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 3900 ? (tolerance 10 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit v sup supply voltage [1] 3.3 3.6 3.9 v i cc(tot) total supply current [2] 55 70 85 ma 1k ? ? r3 ? 5k ? [2] 30 - 250 ma 1k ? ? r3 ? 5k ? ; pin enable = low [2] -4 6 ? a t case case temperature [3] ? 40 +25 +85 ?c
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 8 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier [1] supply voltage on pins rf_out and v cc . [2] current through pins rf_out and v cc . [3] t case is the temperature at the soldering point of the exposed die pad. [4] on digital input pin enable. 13. dynamic characteristics i cc supply current on pin rf_out - 63 - ma on pin v cc -7 - ma on pin enable - - 3 ? a v il low-level input voltage [4] 0- 0.7v v ih high-level input voltage [4] 2.5 - v sup v table 8. static characteristics ?continued 3.3 v ? v sup ? 3.9 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 3900 ? (tolerance 10 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit table 9. dynamic characteristics 3.3 v ? v sup ? 3.9 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 3900 ? (tolerance 10 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit f frequency 400 - 2700 mhz measured at ism-434 mhz (see section 14 ) f frequency 433 434 435 mhz g p power gain 433 mhz ? f ? 435 mhz 14 17 20 db 433 mhz ? f ? 435 mhz; pin enable = low - ? 17 - db p l(1db) output power at 1 db gain compression 433 mhz ? f ? 435 mhz 25 28 - dbm p l(3db) output power at 3 db gain compression 433 mhz ? f ? 435 mhz - 29.5 - dbm imd3 third-order intermodulation distortion 433 mhz ? f ? 435 mhz; p l = 15 dbm per tone; tone spacing = 1 mhz - ? 34 - dbc nf noise figure 433 mhz ? f ? 435 mhz - 4.5 - db rl in input return loss 433 mhz ? f ? 435 mhz 8 10 - db 433 mhz ? f ? 435 mhz; pin enable = low - 4.5 - db rl out output return loss 433 mhz ? f ? 435 mhz 6 8 - db 433 mhz ? f ? 435 mhz; pin enable = low - 0.5 - db isl isolation 433 mhz ? f ? 435 mhz - 28 - db 433 mhz ? f ? 435 mhz; pin enable = low - ? 17 - db ? efficiency 433 mhz ? f ? 435 mhz; at p l(3db) -56- % t d(pu) power-up delay time after pin enable is switched to logic high; to within 0.1 db of final gain state. -2.2- ? s t d(pd) power-down delay time after pin enable is switched to logic low; to within 0.1 db of final gain state. -0.5- ? s
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 9 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 14. application information the BGA6130 can be used for a wide variety of applications. this section describes two example applications in the industrial, scie ntific and medical (ism) frequency bands at 434 mhz and at 915 mhz. the ism-434 band is used in region 1, europe, africa, the middle east west of the persian gulf including iraq, the former soviet union and mongolia, whereas the ism-915 band is used in region 2, americas, greenland and some of the eastern pacific islands. example ism applications are wireless sensor networks (wsn), zigbee and wlan. 14.1 application board customer evaluation boards are available from nxp (see section 6 ? ordering information ? ). the BGA6130 shall be decoupled and matched as depicted in figure 6 . the ground leads and exposed paddle should be connected directly to the ground plane. enough via holes should be provided to connect top and bottom ground planes in the final application board. sufficient cooling should be provided preventing the temperature of the exposed die pad from exceeding 85 ? c. the ism-434 and ism-915 application boards have the same input and output matching topology, but differ in component values. resistor r3 is used to set th e bias current. note resistor r2 which can be used to limit the current through the esd protection circuit in measured at ism-915 mhz (see section 14 ) f frequency 902 915 928 mhz g p power gain 902 mhz ? f ? 928 mhz 11 14 17 db 902 mhz ? f ? 928 mhz; pin enable = low - ? 16.5 - db p l(1db) output power at 1 db gain compression 902 mhz ? f ? 928 mhz 26 29 - dbm p l(3db) output power at 3 db gain compression 902 mhz ? f ? 928 mhz - 30 - dbm imd3 third-order intermodulation distortion 902 mhz ? f ? 928 mhz; p l = 15 dbm per tone; tone spacing = 1 mhz - ? 34 - dbc nf noise figure 902 mhz ? f ? 928 mhz - 4 - db rl in input return loss 902 mhz ? f ? 928 mhz 8 10 - db 902 mhz ? f ? 928 mhz; pin enable = low - 2.5 - db rl out output return loss 902 mhz ? f ? 928 mhz 6 8 - db 902 mhz ? f ? 928 mhz; pin enable = low - 0.5 - db isl isolation 902 mhz ? f ? 928 mhz - 28 - db 902 mhz ? f ? 928 mhz; pin enable = low - ? 16.5 - db ? efficiency 902 mhz ? f ? 928 mhz; at p l(3db) -60- % t d(pu) power-up delay time after pin enable is switched to logic high; to within 0.1 db of final gain state. -2.5- ? s t d(pd) power-down delay time after pin enable is switched to logic low; to within 0.1 db of final gain state. -0.5- ? s table 9. dynamic characteristics ?continued 3.3 v ? v sup ? 3.9 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 3900 ? (tolerance 10 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 10 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier case the voltage on pin enable exceeds the supply voltage on pin v cc . l3, c8, c9 and c10 are used to feed a dc current to the rf transistor. the other passive components are used for input and an output matching. the printed-circuit board (pcb) is a four metal layer substrate board as described in figure 7 . the width and the gap between the strip-line and ground plane are configured such that a 50 ohm transmission line is obtained. see table 10 for list of components. fig 6. application diagram of customer evaluat ion board for ism-434 and ism-915 application %$1'*$3 9, &219(57(5 5)b287 9 && ,&4b$'- (1$%/( 9 (1$%/( 9 683 5 5 *1' / ddd 5)b,1 06/ ; ; 06/ 06/ 06/ 06/ 06/ 06/ 5 & / / & & & & & & & & fig 7. printed-circuit board (pcb) stack build 5)dqgdqdorjurxwlqj ?p&x? p$x pp)5 ?p&x? p$x wkurxjkyld 5)dqgdqdorjjurxqg ddd
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 11 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier fig 8. top view of populated ism-434 printed-circuit board (pcb) ddd - - 5 & & *)('&%$ 5 06/ 06/ 5),1 5)287 *1' *1' *1' *1' 9ff (qd - 1;36(0,&21'8&7256 6275%5hy 06/ 06/ 06/ 06/ 06/ 06/ & & & / 5 & & / & & / fig 9. top view of populated ism-915 printed-circuit board (pcb) ddd - - 5 & & *)('&%$ 5 06/ 06/ 5),1 5)287 *1' *1' *1' *1' 9ff (qd - 1;36(0,&21'8&7256 6275%5hy 06/ 06/ 06/ 06/ 06/ 06/ 06/ & & & / 5 & & / & & /
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 12 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier [1] length (l) is specified, width (w) = 1.6 mm and spacing (s) = 0.8 mm. table 10. list of components see figure 6 for schematics. component description value remarks ism-434 ism-915 c1 capacitor 1 nf 1 nf murata grm series c2 capacitor 15 pf 10 pf murata grm series c3 capacitor 15 pf 12 pf murata grm series c4 capacitor 2 pf 2.7 pf murata grm series c5 capacitor 15 pf 5.6 pf murata grm series c6 capacitor 1 nf 1 nf murata grm series c7 capacitor 1 nf 1 nf murata grm series c8 capacitor 100 nf 100 nf murata grm series c9 capacitor 10 ? f10 ? f murata grm series ic1 BGA6130 - - nxp msl1 micro stripline 5.9 mm 5.9 mm [1] msl2 micro stripline 3.1 mm 1.8 mm [1] msl3 micro stripline - 1.7 mm [1] msl4 micro stripline 1.7 mm 1.8 mm [1] msl5 micro stripline 3.1 mm 3.2 mm [1] msl6 micro stripline 1.7 mm 1.5 mm [1] msl7 micro stripline 6.8 mm 6.8 mm [1] r1 resistor 220 ? 220 ? r2 resistor 270 ? 270 ? r3 resistor 3900 ? 3900 ? l1 inductor 15 nh 1.5 nh murata lqw series l2 inductor 5.6 nh 1.5 nh murata lqw series l3 rf choke 68 nh 27 nh murata lqw series x1, x2 sma connector - -
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 13 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 14.2 characteristics ism-434 v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 10. power gain as a function of frequency for ism-434 application; typical values fig 11. isolation as a function of frequency for ism-434 application; typical values v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 12. input return loss as a function of frequency for ism-434 application; typical values fig 13. output return loss as a function of frequency for ism-434 application; typical values ddd i*+] * s * s g% g% g% ddd i*+] ,6/ ,6/ ,6/ g% g% g% ddd i*+] _v _v _ _v _ g% g% g% ddd i*+] _v _v _ _v _ g% g% g%
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 14 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for ism-434. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 14. third order intermodulation distortion as a function of frequency fo r ism-434 application; different temperatur es; typical values fig 15. third order intermodulation distortion as a function of frequency for ism-434 application; different supply voltages; typical values v sup = 3.6 v; i cc(tot) = 70 ma; ? f = 1 mhz; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; ? f = 1 mhz; matched for ism-434. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 16. third order intermodulation distortion as a function of output power for ism-434 application; different temperatures; typical values fig 17. third order intermodulation distortion as a function of output power for ism-434 application; different supply voltages; typical values ddd i0+] ,0' ,0' ,0' g%f g%f g%f ddd i0+] ,0' ,0' ,0' g%f g%f g%f ddd 3 / g%pshuwrqh ,0' ,0' ,0' g%f g%f g%f ddd 3 / g%pshuwrqh ,0' ,0' ,0' g%f g%f g%f
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 15 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-434. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 18. output power at 1 db gain compression as a function of frequency fo r ism-434 application; different temperatur es; typical values fig 19. output power at 1 db gain compression as a function of frequency for ism-434 application; different supply voltages; typical values v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-434. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 20. efficiency as a function of output power for ism-434 application; different temperatures; typical values fig 21. efficiency as a function of output power for ism-434 application; different supply voltages; typical values ddd i0+] 3 /g% /g% 3 /g% g% g% g% ddd i0+] 3 /g% /g% 3 /g% g% g% g% ddd 3 / g%p ddd 3 / g%p
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 16 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-434. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 22. noise figure as a function of frequency for ism-434 application; different temperatures; typical values fig 23. noise figure as a function of frequency for ism-434 application; different supply voltages; typical values v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-434. fig 24. power-on delay time; typical values fig 25. power-down delay time; typical values ddd i*+] 1) 1) 1) g% g% g% ddd i*+] 1) 1) 1) g% g% g% ddd wv 9 ,glj ,glj 9 ,glj 9 9 9 9 ,5)287 ,5)287 9 ,5)287 p9 p9 p9 9 ,glj ,glj 9 ,glj 9 9 ,5)287 ,5)287 9 ,5)287 ddd wv 9 ,glj ,glj 9 ,glj 9 9 9 9 ,5)287 ,5)287 9 ,5)287 p9 p9 p9 9 ,glj ,glj 9 ,glj 9 9 ,5)287 ,5)287 9 ,5)287
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 17 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 14.3 characteristics ism-915 v sup = 3.6 v; i cc(tot) = 70 ma; pin enable = low; matched for ism-434. (1) g p (2) isl v sup = 3.6 v; i cc(tot) = 70 ma; pin enable = low; matched for ism-434. (1) ? s 11 ? 2 (2) ? s 22 ? 2 fig 26. isolation in power-down mode; typical values fig 27. return loss in power-down mode; typical values ddd i*+] * s ,6/ ,6/ * s ,6/ g% g% g% ddd i*+] _v _v _ _v _v _ _v _ _v _ g% g% g% v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 28. power gain as a function of frequency for ism-915 application; typical values fig 29. isolation as a function of frequency for ism-915 application; typical values ddd i*+] * s * s g% g% g% ddd i*+] ,6/ ,6/ ,6/ g% g% g%
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 18 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 30. input return loss as a function of frequency for ism-915 application; typical values fig 31. output return loss as a function of frequency for ism-915 application; typical values v sup = 3.6 v; i cc(tot) = 70 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for ism-915. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 32. third order intermodulation distortion as a function of frequency fo r ism-915 application; different temperatur es; typical values fig 33. third order intermodulation distortion as a function of frequency for ism-915 application; different supply voltages; typical values ddd i*+] _v _v _ _v _ g% g% g% ddd i*+] _v _v _ _v _ g% g% g% ddd i0+] ,0' ,0' ,0' g%f g%f g%f ddd i0+] ,0' ,0' ,0' g%f g%f g%f
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 19 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; ? f = 1 mhz; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; ? f = 1 mhz; matched for ism-915. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 34. third order intermodulation distortion as a function of output power for ism-915 application; different temperatures; typical values fig 35. third order intermodulation distortion as a function of output power for ism-915 application; different supply voltages; typical values v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-915. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 36. output power at 1 db gain compression as a function of frequency fo r ism-915 application; different temperatur es; typical values fig 37. output power at 1 db gain compression as a function of frequency for ism-915 application; different supply voltages; typical values ddd 3 / g%pshuwrqh ,0' ,0' ,0' g%f g%f g%f ddd 3 / g%pshuwrqh ,0' ,0' ,0' g%f g%f g%f ddd i0+] 3 /g% /g% 3 /g% g% g% g% ddd i0+] 3 /g% /g% 3 /g% g% g% g%
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 20 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-915. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 38. efficiency as a function of output power for ism-915 application; different temperatures; typical values fig 39. efficiency as a function of output power for ism-915 application; different supply voltages; typical values v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 70 ma; matched for ism-915. (1) v sup = 3.3 v (2) v sup = 3.6 v (3) v sup = 3.9 v fig 40. noise figure as a function of frequency for ism-915 application; different temperatures; typical values fig 41. noise figure as a function of frequency for ism-915 application; different supply voltages; typical values ddd 3 / g%p ddd 3 / g%p ddd i*+] 1) 1) 1) g% g% g% ddd i*+] 1) 1) 1) g% g% g%
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 21 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. v sup = 3.6 v; i cc(tot) = 70 ma; matched for ism-915. fig 42. power-on delay time; typical values fig 43. power-down delay time; typical values v sup = 3.6 v; i cc(tot) = 70 ma; pin enable = low; matched for ism-915. (1) g p (2) isl v sup = 3.6 v; i cc(tot) = 70 ma; pin enable = low; matched for ism-915. (1) ? s 11 ? 2 (2) ? s 22 ? 2 fig 44. isolation in power-down mode; typical values fig 45. return loss in power-down mode; typical values ddd wv 9 ,glj ,glj 9 ,glj 9 9 9 9 ,5)287 ,5)287 9 ,5)287 p9 p9 p9 9 ,glj ,glj 9 ,glj 9 9 ,5)287 ,5)287 9 ,5)287 ddd wv 9 ,glj ,glj 9 ,glj 9 9 9 9 ,5)287 ,5)287 9 ,5)287 p9 p9 p9 9 ,glj ,glj 9 ,glj 9 9 ,5)287 ,5)287 9 ,5)287 ddd i*+] * s ,6/ ,6/ * s ,6/ g% g% g% ddd i*+] _v _v _ _v _v _ _v _ _v _ g% g% g%
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 22 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 15. package outline fig 46. package outline sot908-3 (hvson8) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 02 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqvppduhwkhruljlqdoglphqvlrqv 1rwh 3odvwlfruphwdosurwuxvlrqvripppd[lpxpshuvlghduhqrwlqfoxghg +9621sodvwlfwkhupdohqkdqfhgyhu\wklqvpdoorxwolqhsdfndjhqrohdgv whuplqdoverg\[[pp 627 $ e f' ' k ( ( k hh n /y z \ \ pp vfdoh whuplqdo lqgh[duhd % $ ' ( ; & \ & \ ghwdlo; f $ $ e h h $ &% y z whuplqdo lqgh[duhd ' k ( k / n
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 23 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 16. soldering fig 47. reflow soldering footprint 627 ',0(16,216lqpp )rrwsulqwlqirupdwlrqiruuhiorzvroghulqjri+9621sdfndjh $\ %\ ' 6/[ 6/\ 63[ 63\ *[ *\ 3 & +\ q63[ q63\ rffxslhgduhd vroghuodqgsoxvvroghusdvwh vroghuodqg vroghusdvwhghsrvlw vrwbiu ,vvxhgdwh *\ +\ & *[ 6/[ $\ %\ 6/\ ' 63\ q63[ q63\ 63[ 3
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 24 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 17. abbreviations 18. revision history table 11. abbreviations acronym description cdm charged device model cpe customer-premises equipment esd electrostatic discharge hbm human body model mmic monolithic microwave integrated circuit moca multimedia over coax alliance rfid radio frequency identification sma sub-miniature version a vswr voltage standing-wave ratio wlan wireless local area network table 12. revision history document id release date data sheet status change notice supersedes BGA6130 v.2 20140212 product data sheet - BGA6130 v.1 modifications ? figure 6 on page 10 : figure updated ? table 10 on page 12 : table updated BGA6130 v.1 20121009 product data sheet - -
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 25 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 19.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 19.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BGA6130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 2 ? 12 february 2014 26 of 27 nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 19.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 20. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGA6130 400 mhz to 2700 mhz 1 w high efficiency silicon amplifier ? nxp b.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 february 2014 document identifier: BGA6130 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 design support . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . 3 7 functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 8 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 8.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 functional description . . . . . . . . . . . . . . . . . . . 4 9.1 supply current adjustment . . . . . . . . . . . . . . . . 4 9.2 enable control. . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 thermal characteristics . . . . . . . . . . . . . . . . . . 7 12 static characteristics. . . . . . . . . . . . . . . . . . . . . 7 13 dynamic characteristics . . . . . . . . . . . . . . . . . . 8 14 application information. . . . . . . . . . . . . . . . . . . 9 14.1 application board . . . . . . . . . . . . . . . . . . . . . . . 9 14.2 characteristics ism-434 . . . . . . . . . . . . . . . . . 13 14.3 characteristics ism-915 . . . . . . . . . . . . . . . . . 17 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 16 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 19 legal information. . . . . . . . . . . . . . . . . . . . . . . 25 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 19.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 19.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 19.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26 20 contact information. . . . . . . . . . . . . . . . . . . . . 26 21 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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